Abstract
The fabrication of reliable VLSI multilevel metal interconnections using polypyromellitimide as an interlevel insulator is studied experimentally. A new process that enables one to considerably improve insulation performance is described. The improvement is achieved by optimizing the conversion of a polyamidoacid to a polyimide and by covering the wafer with a layer of functional groups that are to react with the polymer. The former reduces the water content of the polyimide, and the latter provides good adhesion to the semiconductor.
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