Abstract
AbstractIn polar semiconductors, the lattice dielectric function varies resonantly in the radiation frequency range ωT < ω < ωL, where ωT and ωL are the transverse and longitudinal optical phonon frequencies, respectively. The resonant reflectance spectra in the 5–22 THz range from polar semiconductors InSb, AlAs, InP, GaAs, GaN and GaAs/AlGaAs heterostructures are investigated experimentally. The semiconductor resonant reflectors are proposed, and a capability of separating a narrow spectral band from the heated‐body emission spectrum was realized. A new type of the continuous wave THz radiation source operational in the 5–22 THz range is proposed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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