Abstract
A global search for the stable structures of bilayer Ge (BLG) is performed, and the most stable and meta-stable BLG structures are predicted for the first time. Phonon-spectrum calculations and ab initio molecular dynamics simulations confirm their dynamical and thermal stability. The computed electronic structures suggest that the most stable structure is metal while the meta-stable structure of BLG is a semiconductor with an indirect band gap (0.32 eV at the level of PBE functional and 0.81 eV at the level of HSE06). By straining the layer plane of the meta-stable BLG, we observe a phase transition from semiconductor to metal. Furthermore, the adsorption of gas molecules of CO, CO2, NH3, NO and NO2 on the meta-stable structure is also studied. Our results show that the predicted meta-stable BLG also possesses a good feature in gas sensors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
