Abstract
Numerous GaAs epitaxial microcrystals having an average base size of 700 Å×700 Å surrounded mainly by (111) and (110) facets were fabricated on a sulfer-terminated (S-terminated) GaAs (001) substrate by sequentially supplying Ga and As molecular beams. The S-terminated GaAs (001) surface was produced by exposing the surface to a sulfur vapor in the molecular-beam epitaxy system immediately after obtaining a Ga-stabilized surface. The growth of GaAs microcrystals on the S-terminated substrate is caused by a vapor–liquid–solid mechanism. The process consists of forming Ga droplets on the inert surface and reacting the droplets with As to produce GaAs microcrystals. This method termed droplet epitaxy is thought to be a promising growth method for fabricating the GaAs quantum dots.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
