Abstract
A radiation-hardened instrumentation amplifier (IA) that allows precise measurement in radiation environments, including nuclear power plants, space environments, and radiation therapy rooms, was designed and manufactured, and its characteristics were verified. Most electronic systems are currently designed using silicon-based complementary metal-oxide semiconductor (CMOS) integrated circuits (ICs) to achieve a highly integrated low-power design. However, fixed charges induced in silicon by ionization radiation cause various negative effects, resulting in, for example, the generation of leakage current in circuits, performance degradation, and malfunction. Given that such problems in radiation environments may directly lead to a loss of life or environmental contamination, it is critical to implement radiation-hardened CMOS IC technology. In this study, an IA used to amplify fine signals of the sensors was designed and fabricated in the 0.18 μm CMOS bulk process. The IA contained sub-circuits that ensured the stable voltage supply needed to implement system-on-chip (SoC) solutions. It was also equipped with special radiation-hardening technology by applying an I-gate n-MOSFET that blocks the radiation-induced leakage currents. Its ICs were verified to provide the intended performance following a total cumulative dose of up to 25 kGy(Si), ensuring its safety in radiation environments.
Highlights
Silicon-based complementary metal-oxide semiconductor (CMOS) electronic devices used in environments exposed to radiation, such as in nuclear power plants, space environments, and radiation therapy rooms, end up being subject to the total ionizing dose (TID) effect, which is caused by radiation accumulated over a long period of time
The performance of the affected device can degrade, thereby causing significant damage, such as in the malfunction or failure of the entire circuit system [1,2,3,4,5]. When such problems occur in instrumentation amplifiers (IAs) that are typically used in safety, control, and instrumentation
Considering the disastrous consequences of possible failures in measuring sensor signals in radiation facilities, such as nuclear power plants and radiation therapy rooms at hospitals, which could result in safety accidents or loss of life, this radiation-hardened device technology is of critical importance
Summary
Silicon-based complementary metal-oxide semiconductor (CMOS) electronic devices used in environments exposed to radiation, such as in nuclear power plants, space environments, and radiation therapy rooms, end up being subject to the total ionizing dose (TID) effect, which is caused by radiation accumulated over a long period of time. It is worth noting that the radiation-induced generation of fixed charges in n-type metal-oxide semiconductor field effect transistors (n-MOSFETs) can cause a leakage current between the source and the drain. If this happens, the performance of the affected device can degrade, thereby causing significant damage, such as in the malfunction or failure of the entire circuit system [1,2,3,4,5]. ELT, DGA, ringed-source, and H-gate structures are prime examples of radiation-hardened n-MOSFET devices in which the layout modification method has been applied [13,14,15].
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