Abstract
A thorough understanding of recovery phenomena in high-temperature plasticity requires information on both creep (constant stress) and constant strain-rate deformation in the corresponding steady-state regimes. This is demonstrated for the diamond cubic structure elements Si and Ge, where dynamical recovery is characterized by two independent mechanisms, crossing in the range accessible to measurements, which have been identified to obey self-diffusion or cross-slip. In consequence, the stress-strain curves of single crystals show two recovery stages, while in steady-state creep only one (the second) recovery stage can be observed. From deformation experiments on fcc metals published in the literature it is concluded, that the stress-strain curves of at least Au and Al single crystals are also characterized by two recovery stages at high temperatures; it will be shown, however, that the situation is different from that of the semiconductors to some extent. Finally, some preliminary comments concerning dynamical recovery of hexagonal metals are given.
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