Abstract
Donor formation at 700 °C was studied by infrared absorption, etching, transmission electron microscope, resistivity, and spreading resistance measurements in Czochralski grown silicon. The donor concentration is related to the oxygen-precipitate density, oxygen reduction, and carbon reduction by annealing at 700 °C. The donor distribution corresponds to the distribution of oxygen precipitates observed after annealing. The proposed donor is an oxygen precipitate nucleated at a carbon site. The oxygen-related donor formation not only occurs in the bulk of samples but also in the denuded zone. Donor-related microdefects do not seriously influence the threshold voltage in metal-oxide-silicon field-effects-transistors, but are expected to decrease carrier lifetime at the surface of the denuded zone.
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