New optimized HIT solar cell using wide-bandgap nc-3C-SiC:H as a window layer

Abstract

This study focuses on the investigation of HIT solar cell using nanocrystalline hydrogenated cubic silicon carbide (nc-3C-SiC:H) as a window layer. The selection of nc-3C-SiC:H is motivated by its wide bandgap, high electron drift velocity, and exceptional optical, electrical, and structural properties. Employing SCAPS-1D simulator, a comprehensive simulation analysis of thin nc-3C-SiC:H-based solar cell was conducted. By analyzing the current–voltage and quantum efficiency curves, the impact of doping concentration in the window layer was examined, covering a range from [Formula: see text] to [Formula: see text]. A rapid degradation of [Formula: see text] was observed for high doping concentrations. Additionally, the temperature dependence of external DC parameters for the temperatures 273, 300, and 318[Formula: see text]K was explored under AM1.5G and AM1.5D sunlight spectra. The application of two distinct light spectra resulted in the DC parameters exhibiting minimal variation or similarity. The study also took into account the influence of window thickness variation, temperature, and doping concentration. The findings demonstrate a remarkable influence of temperature and doping concentration on the DC parameters. [Formula: see text] value of 30.29[Formula: see text]mA/cm2 was achieved with a 3-nm thickness and an optimal efficiency of 19.48% was registered with a doping concentration of up to [Formula: see text], showcasing the promising potential of nc-3C-SiC:H.