Abstract
We present a new technique to create a reconfigurable Coulomb potential profile. The potential profile on the sample surface covered with residual polymethyl methacrylate (PMMA) layer as charge accumulation substance is performed with a low DC voltage applied to conductive probe tip of scanning microscope. To characterize the resulted Coulomb potential profile Kelvin probe technique is used. The effectiveness of this method is demonstrated by performing measurements of the local conductivity of InAs quantum wires. These investigations revealed an inhomogeneous conductivity of the wires and the formation of a potential barrier in the wire at the contact pad interface when the electronic system of the wire is depleted.
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