Abstract
A new Lateral insulated-gate bipolar transistor (LIGBT) structure on SOI substrate, called controlled anode LIGBT (CA-LIGBT), is proposed. The design of the new structure results in high breakdown voltage and good trade off between turn-off time and on-state voltage drop. Simulation results show that the CA-LIGBT has about 85.0% reduction in turn-off time and about 20.0% increase in on-state voltage drop, as compared to the conventional LIGBT. The breakdown voltage is above 200V. The proposed SOI CA-LIGBT can be fabricated by the conventional trench SOI power IC's process steps, and it is useful for PDP scan driver IC.
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