New findings of X-ray energy responses of silicon surface barrier detectors and their generalized theoretical extension to X-ray responses of position sensitive detectors

Abstract

X-ray energy responses of silicon surface barrier (SSB) semiconductor detectors are found to be explained neither by the commonly believed conventional model using the depletion layer thickness of an SSB detector nor by a recently proposed model using its wafer thickness as the X-ray sensitive layer. Our new theory using both the depletion layer sensitivity and the X-ray response due to a three-dimensional charge diffusion effect in the field-free substrate region of a SSB detector can well fit the response data. This theory is newly extended to analyse each channel response of a multichannel semiconductor X-ray detector fabricated on one silicon wafer; these detectors are widely utilized as position sensitive X-ray detectors for nuclear fusion oriented plasma research as well as for high energy elementary particle studies. A numerical simulation of multichannel detector outputs using our three dimensional diffusion theory is carried out; generalised theoretical formulae are also presented.