Abstract
We have proposed and successfully fabricated a new serial current mirror pixel design for an active-matrix organic light-emitting diode which consists of four polycrystalline silicon thin-film transistors (poly-Si TFTs) and one capacitor. The non uniformity of OLED current (IOLED) due to the nature of a poly-Si TFT is considerably suppressed. Our experimental results show that the non uniformity of IOLED due to threshold voltage and mobility variation is around 7% whereas that of IOLED is about 25% in the conventional 2-TFT pixel. When supply voltage decreases from 10 V to 9.5 V, the non uniformity of OLED current is suppressed to 2.2% whereas that of OLED current is 35% in the 2-TFT pixel. The proposed pixel can successfully compensate the variation of the electrical characteristics of the poly-Si TFTs as well as provide uniform OLED current despite the supply voltage drop.
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