Abstract
In this research thin film layers have been prepared at alternate layers of resistive and dielectric deposited on appropriate substrates to form four – terminal R-Y-NR network. If the gate of the MOS structures deposited as a strip of resistor film like NiCr, the MOS structure can be analyzed as R-Y-NR network. A method of analysis has been proposed to measure the shunt capacitance and the shunt conductance of certain MOS samples. Mat lab program has been used to compute shunt capacitance and shunt conductance at different frequencies. The results computed by this method have been compared with the results obtained by LCR meter method and showed perfect coincident with each other.
Highlights
In recent years, there have been rapidly growing interest and activity in thin film integrated circuits as an approach to microelectronics
If the gate of the MOS structures deposited as a strip of resistor film like NiCr, the MOS structure can be analyzed as R-Y-NR network
These structures, alternate layers of resistive and dielectric films are deposited on appropriate substrates to form four terminal R-Y-NR networks [4], which is a special type of MOS structure
Summary
There have been rapidly growing interest and activity in thin film integrated circuits as an approach to microelectronics. Accumulation occurs typically for negative voltages where the negative charge on the gate attracts holes from the substrate to the oxide-semiconductor interface. There exists a negatively charged inversion layer at the oxide-semiconductor interface in addition to the depletion-layer This inversion layer is due to minority carriers, which are attracted to the interface by the positive gate voltage. C(V) behavior for a MOS capacitance test structure measured at high frequency (1 MHz) These structures, alternate layers of resistive and dielectric films are deposited on appropriate substrates to form four terminal R-Y-NR networks [4], which is a special type of MOS structure. If the MOS gate deposited as a strip of resistor film like NiCr, MOS structure can be analyzed as R-Y-NR network [6]
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