Abstract
Abstract Polycrystalline Ge 1− x Mn x thin films were irradiated with neutrons, and their electrical and magnetic properties have been investigated. As-grown specimens have p-type carriers and electrical resistivities are in the range of 1.3 × 10 −4 –5.2 × 10 −4 ohm cm at room temperature. After the irradiation of neutrons the carrier type is not changed, but the electrical resistivities increase with the amount of neutron irradiation. In addition, some of neutron-irradiated Ge 1− x Mn x thin films transform from the semiconductor characteristics into the metallic characteristics at low temperature. The saturation magnetizations of neutron-irradiated Ge 1− x Mn x thin films decrease, but the coercive forces increase with the irradiation amounts. The XRD analysis suggests that the defects generated by the neutron-irradiation cause the change of electrical and magnetic properties of Ge 1− x Mn x thin films exposed to neutron irradiation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
