Abstract
By means of elastic scattering of thermal neutrons and Raman light scattering the thin atomic structure details, as well as vibrational states, have been investigated in semiconductors Zn1–xNixSe (0 ≤ x≤ 0.026) at 300K. Anisotropic correlated transverse ionic displacements, scaled by 3 nm, induced by Ni, were found for the first time in compounds of that class. In Raman spectra of Zn1–xNixSe two broad intensive bands caused by interaction with acoustic lattice vibrations, were detected. Possible reasons of this nanoscale correlated shear displacements of ions in Zn1–xNixSe are briefly discussed. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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