Abstract
A novel neutral-beam-assisted etching apparatus has been developed for large-diameter etching. Neutral radicals from halide molecules and energetic neutral beams are irradiated on the specimen surface. The etching reaction of these neutral radicals is enhanced by neutral-beam bombardment. The neutral-beam source and the neutral-radical source are produced from a magneto-microwave plasma source. These plasmas are arranged in tandem in front of the specimen. This arrangement enables highly uniform supply of neutral radicals over a large area. This etching system was applied to SiO2 etching using Ar and CHF3 mixed gas. The SiO2 etch rate was 76 nm/min, and the etch rate uniformity was within ±7.4% for an 8-inch-diameter specimen and ±3.4% for a 6-inch-diameter specimen. In addition, highly anisotropic etching shapes of submicron patterns were obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
