Abstract
In the present paper, we describe the mechanisms of photo- and radiation-induced reactions in silicon based resist materials, polysilanes with Si-branchings and Si–H bondings, candidates for future resist materials. Polysilanes have been previously confirmed to show positive-type resist properties for ultra violet (UV) light, electron beams (EB), and X-rays under all conditions. However, the cross-linking reaction of the polymer became dominant in the polysilane with Si-branchings, upon irradiation with UV light, EB, and ion beams. The efficiency of the cross-linking reaction strongly depended on the ratio of Si-branching producing polymer gels in the polysilane with a higher amount of Si-branching than 5%, even with γ-ray irradiation. Polyhydrosilanes containing vinyl groups were revealed to cause efficient cross-linking reactions in the presence of catalysts for hydrosilylation upon exposure to deep UV or X-rays, leading to high-sensitive negative resist materials for extreme UV lithography.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
