Abstract
Indium aluminium antimonide (In 1− x Al x Sb) and cadmium mercury telluride (Cd x Hg 1− x Te) heterostructure diodes, which comprise a near intrinsic active region bounded by more highly doped contact regions, exhibit positive or negative luminescence at medium to long infrared wavelengths when forward or reverse biased respectively at room temperature. In reverse bias, the carrier densities in the near intrinsic region are reduced below their equilibrium values by the effects of exclusion and extraction. In consequence, the radiative recombination is reduced and the devices emit less infrared radiation than the thermal equilibrium value. The observed intensity of the negative luminescence is in general agreement with expected values.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
