Abstract
The transfer characteristics of double-gate (DG) MOSFETs are numerically simulated with 2D quantum drift-diffusion (QDD) model. Negative gate-overlap is introduced in devices to optimize the dynamic capacitance characteristics to get the best speed performance. Separate controlling of the back-gate to vary the threshold voltage is investigated, which makes the device convenient to adaptive for more versatile applications, in both high speed and low power dissipation.
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