Abstract
Molecular spintroinic device based on a single-molecule magnet is one of the ultimate goals of semiconductor nanofabrication technologies. It is thus necessary to understand the electron transport properties of a single-molecule magnet junction. Here we study the negative differential conductance and super-Poissonian shot noise properties of electron transport through a single-molecule magnet weakly coupled to two electrodes with either one or both of them being ferromagnetic. We predict that the negative differential conductance and super-Poissonian shot noise, which can be tuned by a gate voltage, depend sensitively on the spin polarization of the source and drain electrodes. In particular, the shot noise in the negative differential conductance region can be enhanced or decreased originating from the different formation mechanisms of negative differential conductance. The effective competition between fast and slow transport channels is responsible for the observed negative differential conductance and super-Poissonian shot noise. In addition, we further discuss the skewness and kurtosis properties of transport current in the super-Poissonian shot noise regions. Our findings suggest a tunable negative differential conductance molecular device, and the predicted properties of high-order current cumulants are very interesting for a better understanding of electron transport through single-molecule magnet junctions.
Highlights
Molecular spintroinic device based on a single-molecule magnet is one of the ultimate goals of semiconductor nanofabrication technologies
We predict that the negative differential conductance and super-Poissonian shot noise, which can be tuned by a gate voltage, depend sensitively on the spin polarization of the source and drain electrodes
Whereas for the single-molecule magnet (SMM) weakly coupled to two electrodes with either one or both of them being ferromagnetic, the spin polarization of the source and drain electrodes play an important role in the forming speed of the correlated SMM eigenstates involved in the electron tunneling processes, and have a remarkable influence on the transport channels entering bias voltage window[21,31,40]
Summary
Molecular spintroinic device based on a single-molecule magnet is one of the ultimate goals of semiconductor nanofabrication technologies. The frequency-resolved shot noise spectrum of artificial SMM, e.g., a CdTe quantum dot doped with a single S 5 5/2 Mn spin, can allow one to separately extract the hole and Mn spin relaxation times via the Dicke effect[36] Among these observed or predicted characteristics, the negative differential conductance (NDC) is especially concerned due to the SMM’s potential applications in a new generation of molecule-based memory devices and logic circuits. The skewness and kurtosis in the super-Poissonian shot noise regions show the crossovers from a large positive (negative) to a large negative (positive) values, which depend on the spin polarization of the source and drain electrodes These observed characteristics are very interesting for a better understanding of electron transport through single-molecule magnet junctions and will allow for experimental tests in the near future
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