Abstract
SynopsisDielectronic recombination rate coefficients are computed for the Si-like isoelectronic sequence, focusing on the near-threshold resonances of S2+.
Highlights
Comprises a part of our program to assemble a general dielectronic recombination (DR) data base for all ions for modeling dynamic finite plasmas
We conclude from the overestimates observed in the bound energy values that the energy of the resonance is likewise overestimated
It could mean that low-temperature DR should be enhanced by the resonance position
Summary
Comprises a part of our program to assemble a general DR data base for all ions for modeling dynamic finite plasmas.
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