Abstract
By using the droplet epitaxy method, we succeed in fabricating the InAs quantum dots (QDs) with the spatial density of 4×1010∕cm2 and an average lateral size of 20nm on GaAs (001) at the droplets deposition temperature of 50°C and subsequent annealing process under As4 flux. These QDs shows the intense photoluminescence even at room temperature indicating that high-quality InAs QDs can be fabricated by near room temperature droplets deposition and crystallization process by 400°C in situ annealing.
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