Abstract
Intense room-temperature near infrared (NIR) photoluminescence (980 nmand 1032 nm) is observed from Yb,Al co-implanted SiO2 films onsilicon. The optical transitions occur between the 2F5/2 and2F7/2 levels of Yb3+ in SiO2. The additionalAl-implantation into SiO2 films can effectively improve theconcentration quenching effect of Yb3+ in SiO2.Photoluminescence excitation spectroscopy shows that the NIRphotoluminescence is due to the non-radiative energy transfer fromAl-implantation-induced non-bridging oxygen hole defects in SiO2 toYb3+ in the Yb-related luminescent complexes. It is believed thatthe defect-mediated luminescence of rare-earth ions in SiO2 is veryeffective.
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