Abstract
Near infrared (NIR) emission was studied in rubrene:fullerene planar and bulk heterojunction bifunctional devices. The degree of mixing was controlled by changing the substrate temperature for planar heterojunctions and changing the ratio of the two materials for bulk heterojunctions. We found that there was no simple correlation between the presence of the NIR emission and the photovoltaic efficiency and the turn-on voltage of the devices. The origin of the NIR emission and the relationship between EL spectra, photovoltaic efficiency, and the degree of mixing of the donor and acceptor materials is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
