Abstract
Near-band-gap bound and free exciton states in high purity InP are investigated using photoluminescence (PL) and photoconductivity (PC) techniques. Direct comparison is made between features observed in PL excitation and PL spectra. The effects of excitation intensity and applied electric field on the PL spectra are studied and comparison is made with corresponding phenomena in GaAs. Values for the shallow donor binding energy and for the binding energy of excitons at ionised donors are derived.
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