Near-field optical mapping of the ion-implanted patterns fabricated in amorphous silicon carbide

Abstract

We propose scanning near-field optical microscopy as a novel technique for characterizing the ion-implanted patterns fabricated in amorphous silicon carbide (a-SiC:H). Different patterns have been fabricated in a-SiC:H films with a focused Ga +-ion beam system and examined with scanning near-field optical microscopy and atomic force microscopy. Although a considerable thickness change (thinning tendency) has been observed in the ion-irradiated areas, the near-field measurements confirm increases of optical absorption in these areas. The observed values of the optical contrast modulation are sufficient to justify the efficiency of the method for optical data recording using focused ion beams.