Abstract
A Q-switched Nd: YAG laser with a pulse duration of 20 ns was used to investigate effects of laser annealing in gallium implanted silicon. Rutherford backscattering and Hall-effect measurements were performed to evaluate the annealed layer. Differential Hall-effect measurements were carried out to obtain carrier concentration profiles after annealing. It was found that a maximum sheet carrier concentration of 8×1015 cm−2 can be obtained for a gallium implantation of 1016 cm−2 by laser annealing with an energy density of more than 1.0 J cm−2. Although the peak carrier concentration was found to be 8.0×1020 cm−3, the annealed layer showed polycrystalline structures even after annealing with an energy density up to 4J cm−2. The annealing took place in the solid phase in this energy density range.
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