Abstract
The photoelectric effect in a Ge-on-Si single-photon avalanche detector (SPAD) at an ultralow energy in incident pulsed laser radiation is considered in the frame of the classical theory of the electrodynamics of continuous media. It is shown that the energy of incident laser radiation which is shared among a huge number of electrons in a Ge matrix can concentrate on only one of these through the effect of the constructive interference of the fields re-emitted by surrounding electrons. Conservation of energy in this case is upheld because of a substantial narrowing of the effective bandgap in heavily doped p-Ge, which is used in the design of the SPAD considered.
Highlights
IntroductionPublisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations
In the case of Single-photon detectors (SPD), such news is that their detection efficiency (DE) can be nonzero when the energy in a pulse of incident laser radiation Wi is less or even much less than the energy of the photon hω corresponding to the frequency ω of this radiation [19,20,21,22]
The appearance ofcaptured a single e tends additional free electron is obviously an event. If this is the case, the single-photon avalanche detector (SPAD) we consider operates like a conventional photomultiplier tube (PMT), in which the p-Ge layer plays the role of a photocathode, and the intrinsic Ge (i-Ge) layer is equivalent to the vacuum spacing between the photocathode and the multiplying electrons system of dynodes
Summary
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. In the case of SPDs, such news is that their detection efficiency (DE) can be nonzero when the energy in a pulse of incident laser radiation Wi is less or even much less than the energy of the photon hω corresponding to the frequency ω of this radiation [19,20,21,22] Such observations are in clear contradiction with Einstein’s quantum model of the photoelectric effect (PE) [23], which states that a photoelectron appears when the electron absorbs from light the energy of a quantum hω, i.e., of a photon, which exceeds the work function P or bandgap Eg of a material. The amount of data on their characteristics their theoretical analysis is high
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