Abstract
This report deals with a 1/f noise in homogeneous classical semiconductor samples on the base of silicon. We perform detail calculations of resistance fluctuations of the silicon sample due to both a) the charge carrier number changes due to their capture–emission processes, and b) due to screening effect of those negative charged centers, and show that proportionality of noise level to square mobility appears as a presentation parameter, but not due to mobility fluctuations. The obtained calculation results explain well the observed experimental results of 1/f noise in Si, Ge, GaAs and exclude the mobility fluctuations as the nature of 1/f noise in these materials and their devices. It is also shown how from the experimental 1/f noise results to find the effective number of defects responsible for this noise in the measured frequency range.
Highlights
This report deals with a 1/f noise in homogeneous classical semiconductor samples on the base of silicon
The 1/f noise problem in various electronic devices has been investigated over 80 years, and over 60 years in solids, but the origin of the 1/f noise is still open on discussions
It was directly shown that 1/f noise in homogeneous materials is due to its resistance R fluctuations Δ R(t) at equilibrium conditions[1,2]
Summary
This report deals with a 1/f noise in homogeneous classical semiconductor samples on the base of silicon. The obtained calculation results explain well the observed experimental results of 1/f noise in Si, Ge, GaAs and exclude the mobility fluctuations as the nature of 1/f noise in these materials and their devices It is shown how from the experimental 1/f noise results to find the effective number of defects responsible for this noise in the measured frequency range. A problem of spectral density of the resistance fluctuations dependence on frequency has been widely discussed for different materials in many works[3,4,5,6,7,8,9,10,11,12,13,14,15,16,17] and others. Damage and various defects of the sample material have a strong influence to the α value, and it may increase α value by many orders of magnitude[14]
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