Abstract
We review our work on high-frequency conductance in two-dimensional high-mobility electronic systems in wide n-AlGaAs/GaAs/AlGaAs quantum wells. Using simultaneous measurements of the attenuation and velocity of a surface acoustic wave we obtained both real and imaginary components of the complex high-frequency conductance. Based on the experimental results and their analysis we conclude that close to the filling factor ν = 1/5, as well as in the interval 0.18 > ν > 0.125, a Wigner crystal pinned by disorder is formed. Both the melting temperature and the correlation length of the pinning-induced domains in the Wigner crystal were found. In close vicinities of ν = 1 and 2, transitions from single-electron localization to a Wigner crystal were observed.
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