Abstract
Nanostructures in kesterite solar cells are incorporated for performance enhancement. As high recombination limits the efficiency of kesterite-based CZTS/Se solar cell, substituting Ge for Sn as Cu-Zn-Ge-S/Se (CZGS/Se) increases optical characteristics and solar cell overall performance. This research analyses MQWSC (multi-quantum-well solar cell) employing Cu-Zn-Ge-S as a barrier material and Cu-Zn-Ge-Se as a well material. Introducing quantum wells as (2, 10, 20, 30, 40, 50, 70, 100 QWs) in CZGS kesterite groups highlights the novelty of device. To enhance the performance its optic, electric, and structural characteristics are widely researched across nanostructures. An examination of the carrier dynamics of the device is carried out by varying various parameters. By introducing various loss mechanisms, including deep defect and shallow defect, the device’s worst-case operation is also evaluated. A remarkable efficiency of 29% without defect and 20% with defective states obtained from the proposed structure, which signify new route to facilitate the performance of PV (photovoltic) cells for the next generation.
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