Abstract
In this work, the RF performance comparison of lateral and vertical tunnel FETs is presented in the context of ultra low power (ULP) Internet-of-Things (IoT) sensor node circuit applications. It is demonstrated that at low drive currents $(\sim 1\mu \mathrm{A/\mu m})$ , LTFETs outperform VTFETs by an order higher cut-off frequency $(f_{\mathrm{T}})$ of 10 GHz, maximum oscillation frequency $(f_{\mathrm{MAX}})$ of 100 GHz and 50% higher intrinsic gain (Avo). The results show that the TFETs are promising as ULP devices $(V_{\mathrm{ds}}=0.5$ V or less).
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