Abstract

Inorganic perovskite solar cells (IPSCs) have gained significant attention due to their excellent thermal stability and suitable band gap (~1.7 eV) for tandem solar cell applications. However, the defect-induced non-radiative recombination losses, low charge extraction efficiency, energy level mismatches, and so on render the fabrication of high-efficiency inverted IPSCs remains challenging. Here, the use of 3-amino-5-bromopyridine-2-formamide (ABF) in methanol was dynamically spin-coated on the surface of CsPbI2.85Br0.15 film, which facilitates the limited etching of defect-rich subsurface layer, resulting in the formation of vertical PbI2 nanosheet structures. This enabled localized contacts between the perovskite film and the electron transport layer, suppress the recombination of electron-hole and beneficial to electron extraction. Additionally, the C=O and C=N groups in ABF effectively passivated the undercoordinated Pb2+ at grain boundaries and on the surface of CsPbI2.85Br0.15 film. Eventually, we achieved a champion efficiency of 20.80 % (certified efficiency of 20.02 %) for inverted IPSCs with enhanced stability, which is the highest value ever reported to date. Furthermore, we successfully prepared p-i-n type monolithic inorganic perovskite/silicon tandem solar cells (IPSTSCs) with an efficiency of 26.26 %. This strategy provided both fast extraction and efficient passivation at the electron-selective interface.

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