Abstract
Photochemical (PEC) etching and transmission electron microscopy (TEM) have been used to study the defects in hetero-epitaxial GaN layers. TEM proved that PEC etching reveals not only dislocations but also nanopipes in the form of protruding, whisker-like etch features. It is shown by diffraction contrast techniques that the nanopipes are screw coreless dislocations. An example is shown of the transformation of a normal full-core screw dislocation into a nanopipe. The PEC/TEM experiments indicate the presence of electrically active (recombinative) species in the vicinity of the nanopipes.
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