Abstract
The sintering process of Cu2ZnSn(S,Se)4 (CZTSSe) films coated on Mo substrates is optimized by using a selenium/sulfur mixture atmosphere and a designed graphite box. Structural characterization indicates that this optimization is advantageous in reducing the thickness of high resistance Mo(S,Se)2 layer. In addition, Cu content contained in the CdS layer is significantly decreased compared with that obtained by the selenium sintering. An active area efficiency of 9.1% CZTSSe solar cell (without anti‐reflective coating and light soaking) is achieved, demonstrating that the improvement of the Mo/CZTSSe and CZTSSe/CdS interfaces leads to an increased conversion efficiency.
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