Abstract
Wall-patterned GaAs surfaces have been elaborated by photolithography and dry etching. The mechanical response of individual μm-sized walls was tested at different positions on the wall by nanoindentation. Overall results show that contact stiffness remains constant across the wall while total penetration drastically increases at the proximity of the free sides of the wall. Transmission electron microscopy was used to get further insight into the plastic deformation of the walls and reveals that the central-plastic zone governs the mechanical response instead of the rosette arms. The application of substrate patterning with enhanced plastic compliance is suggested in order to eliminate residual dislocations appearing in mismatched structures grown for optoelectronic devices.
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