Nanoindentation and nanoscratching analysis of high transparent F:SiOx thin films deposited by plasma polymerization

Abstract

The mechanical behavior of the high transparent fluorine doped silicon oxide thin films was studied by nanoindentation and nanoscratching analysis. The films were deposited by plasma polymerization in a capacitively coupled RF plasma system using different mixture of Tetraethylorthosilicate-O2-CF4 in the plasma medium. It was found that, the addition of fluorine to the composition of the silicon oxide film, can decrease its optical absorption. Furthermore, it was shown that doping fluorine to SiOx film causes to decrease the hardness, H, elastic modulus, Er, as well as H/Er ratio (predicting the wear rate). But in F-SiOx films deposited in different oxygen flow rate, adding fluorine to the composition of the film increases H/Er ratio. Finally, all of the coated films, except the film deposited without the oxygen flow, could pass the harsh environmental durability test.