Nanoimprint and nanocontact technologies using hydrogen silsesquioxane

Abstract

Room-temperature nanoimprint lithography (RT-NIL) and nanocontact printing (RT-NCP) processes using hydrogen silsesquioxane (HSQ) are promising techniques for fabricating various nanostructure devices. We have evaluated the linewidth dependence of the HSQ imprinted depth and the baking-temperature dependence of HSQ replicated patterns after RT-NIL. We have also demonstrated an advanced bilayer resist process with HSQ as a top layer and AZ photoresist as a bottom layer; this process can be used to fabricate high-aspect resist patterns on a Si substrate for RT-NIL and RT-NCP. The etching-rate ratio of the AZ photoresist to HSQ exceeds 100 for O2 reactive-ion etching, which means the etching tolerance of the HSQ top layer is sufficient to enable its use as a mask. We have fabricated high-aspect nanostructure patterns with 100 nm linewidth and 1 μm height using RT-NIL and 150 nm linewidth and 1 μm height by using RT-NCP. Furthermore, we have successfully transferred Au electrode patterns from a mold onto HSQ resin by using the adhesion properties of HSQ.