Abstract
Self-induced GaN nanowires were grown on Si (211) substrates by plasma assisted molecular beam epitaxy. It is found that nitridation of Si (211) substrates at high temperatures in excess of 1170°C leads to the nanopatterning of the Si (211) surface thereby providing the template for patterned growth of nanowires. The grown nanowires were characterised by field emission scanning electron microscopy, high resolution X-ray diffraction and high resolution transmission electron microscopy which reveal that the GaN nanowires have wurtzite crystal structure and are of high crystalline quality. Through this paper we show that high index silicon substrates with Si (111) terraces can be used to grow nanowires aligned at desired angles.
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