Abstract
We report the fabrication of nanometer-scale Si structures using an atomic force microscope. A conducting AFM tip was used to write nanometer-scale oxide patterns by the local anodic oxidation of a passivated Si(100) surface. These oxide patterns were used as masks for selective etching of the silicon to form the completed structures. Side-gated Si field effect transistors with critical features as small as 30 nm have been fabricated by this method.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
