Abstract
Nanocrystalline 2% Ga doped zinc oxide (GaZnO) thin films were epitaxially deposited on n-type 4H―SiC (0001) by a pulsed laser deposition (PLD) at different substrate temperatures of 250, 400, and 550 ° C, respectively. Structural and electrical properties of nanocrystalline GaZnO thin film on 4H―SiC were investigated by using X-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, transmission line method (TLM), and Auger electron spectroscopy (AES). The nanocrystalline GaZnO film deposited at 400 °C show the lowest resistivity of 3.3 x 10 ―4 Ω cm, and highly c-axis oriented crystalline quality with being sharper and higher diffraction angle, which result in. The specific contact resistance (ρ c ), measured from the Au/Ti/GaZnO/SiC of ∼0.05 Ω cm 2 . The relative amount of activated Ga 3+ ions was 2.02% in GaZnO film by AES measurement.
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