Abstract
Bismuth sulfide (Bi2S3) nanocrystalline thin films were deposited on glass substrate by a simple and low-cost thioglycolic-assisted successive ionic layer adsorption and reaction method, using bismuth acetate and thioacetamide as cationic and anionic precursors respectively. Influence of cationic concentration on the structural, optical and electrical properties of Bi2S3 thin films were investigated. X-ray diffraction pattern revealed that the prepared Bi2S3 thin films are polycrystalline with orthorhombic structure. The surface morphology of Bi2S3 thin films examined by atomic force microscopy showed cluster like morphology, and having small hillocks of fairly uniform distribution. Optical studies showed a direct band-to-band transition, and the estimated optical band gap decreases from 1.81eV to 1.25eV with the increase in cationic concentration from 0.01M to 0.03M. Electrical resistivity measurements by four probe technique revealed negative temperature coefficient of resistance, which confirms the semiconducting nature of Bi2S3 thin films. The activation energy of Bi2S3 thin films was found to decrease from 0.059eV to 0.022eV with the increase in cationic concentration from 0.01M to 0.03M, which is attributed to improved grain size and reduction in the defect levels.
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