Abstract
Near-field scanning optical microscopy (NSOM) is applied for analyzing GaN-based diode lasers. The measurements are carried out at the front facets of standard devices without any additional preparation. Four different schemes for luminescence and photocurrent detection are applied. The results allow for a detailed analysis of the epitaxial layer sequence, the waveguide mode, the impact of defect absorption, and efficiencies of carrier transfer into the quantum well. Moreover, the effective potential profile as formed by both layer structure and doping profile is imaged. Features being spatially separated by only 30 nm are safely resolved. Our results pave the way towards non-destructive nanoscopic analysis of wide-bandgap optoelectronic devices.
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