Abstract
Photo-electrochemical etching of n-type (100) silicon single crystal in fluoride solution has been investigated. The etching rate of the silicon is enhanced in fluoride solution (aM) by addition of cM CC01. The etching rate is accelerated in the presence of UV-visible light. Anodic polarization of the photo-electrochemical system etched in fluoride solution demonstrated that the etching rate is affected by various additives. The etching rate of the n-type Si(100) in solution C(containing aM HF+cM CC01)is faster than that in any other solutions(A、B、D and E). The pores etched in solution D (aM HF+dM CC02) show smooth morphology even the etching rate is slightly slower than in solution C.
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