Abstract
A technique is presented to create porous silicon (PS) thin films with long-term optical stability when exposed to normal room conditions. This technique requires the thin films to undergo a rapid thermal annealing treatment at a relatively low temperature of 600°C in N 2 atmosphere for 6 min. Annealing at such a low temperature enables the surface passivation of PS via nitridation without causing the excessive roughness and sintering widely observed at higher annealing temperatures. A mechanism similar to the Haber process is proposed to explain the surface nitridation, in which the nitrogen atmosphere interacts with the as-anodized hydrogen surface species.
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