Abstract
Heavily doped n-type silicon is readily anodically dissolved in HF solution, although, according to eleetrochemical concepts, the dissolution reaction requires holes. Measurement of the n + silicon-electrolyte interface capacitance has been made in order to determine whether the bands are bent sufficiently to allow band-to-band tunneling as the current flow mechanism for anodic dissolution. It is found, however, that the band bending is only − 0.25 V when the measured capacitance departs from simple Mott-Schottky behavior and increases as large currents ( J > 1 mA cm 2 ) begin to be drawn. Other bulk internal field emission processes or impact ionization are eliminated as current flow mechanisms from consideration of published data on MOS breakdown and ionization rates respectively. Surface generation, taking into account tunnel transitions, does qualitatively explain the observed current-voltage and capacitance-voltage behavior.
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