Abstract
In order to examine the sputtering process of indium tin oxide (ITO) films, secondary neutral mass spectrometry (SNMS) was applied to analyze fragmentation of the sputtered neutral particles from the ITO target. It was found that both atomic and molecular fragments such as InOSn were included in the sputtered neutrals. The relative amount of InOSn cluster fragment depends on the structural state of Sn atoms in the ITO target. That is, there are two structural state of Sn atoms so for as known; one is SnO2 grain segregated in In2O3, and the other is the solid solution state of Sn in In2O3 structure. The latter is related to the formation of InOSn cluster. On the basis of the analyses, mechanisms are discussed as to how the electrical resistivity of the sputtered ITO films is influenced by the structural state of Sn in the ITO target.
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