Abstract
Epitaxial growth of Fe films on Si(l00), Si(110), and Si(111) substrates was achieved by dc facing targets sputtering. The substrate de bias was found to be an important parameter for achieving epitaxial growth. When this bias was not applied, no epitaxial films were obtained except on the Si(111) substrate. Electron diffraction and X-ray rocking curve measurement confirmed that the epitaxial relationship for Fe(111)/Si(111) was B-type (twinned epitaxy). The in-plane anisotropy for Fe(l00)/Si(l00) and Fe(111)/ Si(111) was explained as megnetocrystalline anisotropy. However, the anisotropy for Fe(110)/Si(110) was different from that for bulk Fe.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
