Abstract
In consideration of the great influence of the sheet resistance of Ge thin film in a single-photon counting imaging detector on its imaging characteristics, this paper explores the selection of the resistance range. As the resistance values are relative to charge cloud diffusion on the Ge thin film, it will effect the counting rate and resolution ratio of the single-photon counting imaging detector. Therefore, the charge cloud diffusion characteristics on the Ge thin film under condition of absorbing boundary were analyzed based on FICK diffusion law and the relationship of the time of charge cloud diffusion on the thin film and the sheet resistance was calculated by the finite diffusion equation. The analysis results show that the photon counting detector has well spatial resolution and counting rate when the sheet resistance of Ge thin film is between 30 M/ and 2700 M/. The imaging experiments on Ge film anode with different resistance values were performed, and obtained data demonstrate that the resolution of the photo counting detector can reach 0.5 mm at counting rate of 53 kc/s when sheet resistance of Ge thin film is in the theoretical range, which proves the validity of resistance value selection range by the proposed method.
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