Abstract
In order to reduce the off-state leakage current and increase the on /off current ratio in ZnO thin-film transistor(ZnO-TFT),Si-doped ZnO thin-film transistors(SZO-TFTs) and TFT with SZO /ZnO acted as dual-active-layer were fabricated by magnetron sputtering method. Effects of silicon concentration on optical transmittance of Si-doped ZnO thin film and electrical properties of SZO-TFT were investigated. Moreover,the electrical characteristics of the TFT with SZO /ZnO acted as dual-active-layer were compared with those of the TFTs with ZnO and Si-doped ZnO acted as single-active-layer. The experimental results indicated that,compared with undoped ZnO-TFT,the offstate leakage current of SZO-TFT reduces by more than two orders of magnitude,down to 1. 5 ×10-12 A,and the on /off current ratio increases by more than two orders of magnitude with a maximum value up to 7. 97 × 106; The SZO/ZnO dual-active-layer architecture used in the ZnO-based TFT could increase the on /off current ratio by about two orders of magnitude with no reduction in carrier mobility,and thus optimize the performance of the ZnO-based TFT.
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